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| NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability. Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Emitter-Base VOltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TC = +25C unless otherwise spcified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Emitte Cutoff Current Collector Cutoff Current V(BR)CEO(sus) IC = 100mA IEBO ICEX VEB = 10V VCE = 150V, VBE = -1.5V VCE = 150V, VBE = -1.5V, TC = +150C ON Characteristics (Note 1) DC Current Gain Collector Saturation Voltage Base-Emitter Voltage hFE VCE(sat) VBE VCE = 3V, IC = 10A IC = 10A, IB = 1.5A IC = 10A, IB = 1.5A 10 - - - - - 50 1.5 2.5 V V 150 - - - - - - - - 250 2 20 V A mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse test: Pulse Width = 300s, Duy Cycle 2%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise spcified) Parameter Dynamic Characteristics Small-Signal Current Gain Turn-On Time Turn-Off Time Rise Time Storage Time Fall Time hfe ton toff tr ts tf VCE = 3V, IC = 10A, f = 1MHz VCC = 30V, IC = 10A, IB1 = 1.5A, IB2 = 1.5A 0.6 - - - - - - - - - - - - 3.5 12.0 3.5 6.0 6.0 s s s s s Symbol Test Conditions Min Typ Max Unit Base .500 (12.7) .865 (21.95) Emitter .760 (19.3) Dia .083 (2.1) Dia Collector/Stud .083 (2.1) Dia .984 (25.0) .503 (12.6) .129 (3.3) 5/16-24 UNF .105 (2.65) Max .477 (12.1) |
Price & Availability of NTE71
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